MPCVD長晶爐

所屬分類：

C單晶生長設(shè)備

概要：

本設(shè)備主要是用于制備單晶金剛石?？杉ぐl(fā)高穩(wěn)定度的等離子團(tuán)，從而確保單晶生長的持續(xù)性，為合成大尺寸單晶金剛石提供有力保證。

關(guān)鍵詞：

MPCVD長晶爐

MPCVD長晶爐

產(chǎn)品概述/Product Introduction：

The equipment is mainly used forthe preparation of single crystal diamond.It can excite the plasma cluster with high stability, thus ensuring the continuity of single crystal growth and providing a strong guarantee for the synthesis of large-size single crystal diamond.

產(chǎn)品特點(diǎn)/Product Characteristics：

♦ 制程溫度范圍:300-1500℃ Temperature process range: 300-1500C

♦ 氣路系統(tǒng):6路 Gas path system: 6 channels

♦ 微波功率:6-15Kw連續(xù)可調(diào) Microwave power: 6-15Kw continuously adjustable

♦ 波紋:≤1% Ripple:≤1%

♦ 微波泄露值:＜5Mw/cm2 Microwaveleakagevalue:<5Mw/cm²

♦ 沉積區(qū)域:≥100mm Deposition area:≥100 mm

♦ 極限真空:≤10Pa Limit vacuum:≤10Pa

♦ 壓力范圍:5-300Torr Pressure range: 5-300 Torr

♦ 功率穩(wěn)定性:＜2% Power stability:<2%

♦ 微波頻率:2.45GHz土50MHz Microwave frequency:2.45GHz ± 50MHz

♦ 放電區(qū)域:≥100mm Discharge area:≥100mm